4.6 Article

Over 65% Sunlight Absorption in a 1 μm Si Slab with Hyperuniform Texture

Journal

ACS PHOTONICS
Volume 9, Issue 4, Pages 1206-1217

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.1c01668

Keywords

ultrathin photovoltaics; light trapping; hyperuniform correlated

Funding

  1. EPSRC [EP/P033431, EP/M013812, EP/M027961]
  2. University of Surrey's IAA awards
  3. EPSRC (United Kingdom) [EP/M027791/1, EP/N509772/1]
  4. EPSRC (United Kingdom) Strategic Equipment Grant [EP/L02263X/1, EP/M008576/1]

Ask authors/readers for more resources

This study presents a new surface texturing technique for improving the absorption and efficiency of thin crystalline silicon solar cells. By using hyperuniform nanostructuring, it achieves a high solar light absorption of 66.5% in the spectral range of 400 to 1050 nm. This technology has the potential to increase the cell efficiency to above 15%.
Thin, flexible, and invisible solar cells will be a ubiquitous technology in the near future. Ultrathin crystalline silicon (c-Si) cells capitalize on the success of bulk silicon cells while being lightweight and mechanically flexible, but suffer from poor absorption and efficiency. Here we present a new family of surface texturing, based on correlated disordered hyperuniform patterns, capable of efficiently coupling the incident spectrum into the silicon slab optical modes. We experimentally demonstrate 66.5% solar light absorption in free-standing 1 mu m c-Si layers by hyperuniform nanostructuring for the spectral range of 400 to 1050 nm. The absorption equivalent photocurrent derived from our measurements is 26.3 mA/cm(2), which is far above the highest found in literature for Si of similar thickness. Considering state-of-the-art Si PV technologies, we estimate that the enhanced light trapping can result in a cell efficiency above 15%. The light absorption can potentially be increased up to 33.8 mA/cm(2) by incorporating a back-reflector and improved antireflection, for which we estimate a photovoltaic efficiency above 21% for 1 mu m thick Si cells.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available