4.6 Article

Silicon Carbide Photonics Bridging Quantum Technology

Journal

ACS PHOTONICS
Volume 9, Issue 5, Pages 1434-1457

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.1c01775

Keywords

photoluminescence; nonlinear optics; point defects in the bandgap; single photon source; quantum sensing; quantum nanophotonics

Funding

  1. RMIT University Vice-Chancellor's Senior Research Fellowship
  2. Google Faculty Research Award
  3. Australian Government through the Australian Research Council under the Centre of Excellence Scheme [CE170100012]
  4. Engineering and Physical Sciences Research Council [EP/S000550/1, EP/V053779/1]
  5. Leverhulme Trust [RPG-2019-388]
  6. European Commission [862721]
  7. European Research Council (ERC)
  8. European Commission Marie Curie ETN QuSCo [765267]
  9. Max Planck Society
  10. Humboldt Foundation
  11. German Research Foundation [SPP 1601]
  12. German Federal Ministry of Education and Research (BMBF) [16KIS0867, 16KISQ013, 03ZU1110IB, 13N16219]
  13. Ministerium fur Wirtschaft, Arbeit and Tourismus Baden-Wurttemberg [3-4332.62-IAF/7]
  14. EU-FET Flagship on Quantum Technologies [820394, 820445]
  15. EU [899679]
  16. National Science Foundation CAREER Award [2047564]
  17. Marie Curie Actions (MSCA) [765267] Funding Source: Marie Curie Actions (MSCA)
  18. Div Of Electrical, Commun & Cyber Sys
  19. Directorate For Engineering [2047564] Funding Source: National Science Foundation

Ask authors/readers for more resources

In the past two decades, there have been significant advancements in the growth of silicon carbide (SiC) for electronic devices, particularly in high-power and high-frequency applications. Recent research has also uncovered unique optical properties of SiC that can be used for novel photonic devices. The combination of excellent electronic, photonic, and spintronic properties in SiC has prompted research in the development of devices and sensors in the quantum technology domain.
In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide (SiC) has witnessed many advances, giving rise to electronic devices widely used in highpower and high-frequency applications. Recent research has revealed that SiC also exhibits unique optical properties that can be utilized for novel photonic devices. SiC is a transparent material from the UV to the infrared, possess nonlinear optical properties from the visible to the mid-infrared and it is a meta-material in the mid-infrared range. SiC fluorescence due to color centers can be associated with single photon emitters and can be used as spin qubits for quantum computation and communication networks and quantum sensing. This unique combination of excellent electronic, photonic and spintronic properties has prompted research to develop novel devices and sensors in the quantum technology domain. In this perspective, we highlight progress, current trends and prospects of SiC science and technology underpinning the development of classical and quantum photonic devices. Specifically, we lay out the main steps recently undertaken to achieve high quality photonic components, and outline some of the current challenges SiC faces to establish its relevance as a viable photonic technology. We will also focus on its unique potential to bridge the gap between classical and quantum photonics, and to technologically advance quantum sensing applications. We will finally provide an outlook on possible alternative applications where photonics, electronics, and spintronics could merge.

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