4.8 Article

The nanowire length dependence of the photoresponse and Pyro-phototronic response in the ZnO-based heterojunctions

Journal

NANO ENERGY
Volume 95, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.nanoen.2022.107004

Keywords

ZnO nanowire; ZnO Heterostructure; Photoresponse; Pyro-phototronic effect; Broadband

Funding

  1. National Nature Science Foundation of China [62175058, U20A20166, 11704094, 51972094]
  2. Nature Science Foundation of Hebei Province [F2019201047, F2018201198]
  3. Science and Technol-ogy Plan Project of Hebei Province [216Z1703G]

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By investigating the photoresponse and pyro-phototronic response of ZnO/Si and ZnO/PEDOT:PSS heterojunctions, it is found that the nanowire length strongly affects the photoresponse, and the optimal length and performance differ significantly between the two heterostructures. Furthermore, the introduction of the pyro-phototronic effect greatly improves the photoresponse and enables an ultra-broadband response range.
In this work, two series of ZnO/Si and ZnO/PEDOT:PSS heterojunctions are prepared with the ZnO nanowire length ranging from 200 to 1300 nm, and both the photoresponse and the Pyro-phototronic response to different nanowire lengths are well investigated under the illumination of different power density and laser wavelength. It is found that the photoresponses are strongly dependent on the nanowire length. However, the optimal length, as well as the performances, is quite different for the two heterostructures as it is 400 nm in the ZnO/Si hetero-junction with the responsivity of 67.6 mA/W and 0.565 mA/W under + 1 V and zero bias voltage, respectively, and turns to 200 nm in the ZnO/PEDOT:PSS heterojunction with the responsivity reaching 107.9 A/W and 0.199 mA/W under + 0.4 V and zero bias voltage, respectively. Moreover, when the Pyro-phototronic effect is intro-duced, the photoresponses are all greatly improved with an increment as large as 1589%. Meanwhile, an ultra-broadband response range of 360-1550 nm, which is far beyond the bandgap of both the ZnO and the hetero-junctions, is also achieved in the two heterostructures. However, the optimal response wavelength, which is observed at the 450 nm and 360 nm for the ZnO/Si and ZnO/PEDOT:PSS heterostructures, respectively, varies considerably. These tremendous differences in the two heterostructures can be ascribed to their different light absorption, carriers' transport and separation, pyroelectric potential, and band alignment properties.

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