Journal
MICROMACHINES
Volume 13, Issue 5, Pages -Publisher
MDPI
DOI: 10.3390/mi13050652
Keywords
self-aligned coplanar; IGZO TFT; S; D region; n(+)-formation; magnetron sputtering inter-layer dielectric
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Funding
- National Key Research and Development Program [2018YFA0208503]
- Opening Project of the Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
- National Natural Science Foundation of China [61890944, 61725404, 61874134, 61804170, 61821091, 61888102, 61720106013, 61904195, 61404164, 62004214]
- Beijing Training Project for the Leading Talents in ST [Z151100000315008]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB30030000, XDB30030300]
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An inter-layer dielectric (ILD) deposition process is demonstrated for the fabrication of coplanar In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) to simultaneously form conductive regions. The process allows the deposition of N+-IGZO regions and achieve excellent ohmic contact without additional steps. The fabricated TFTs show good performance and the applicability is verified by a ring oscillator.
An inter-layer dielectric (ILD) deposition process to simultaneously form the conductive regions of self-aligned (SA) coplanar In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) is demonstrated. N+-IGZO regions and excellent ohmic contact can be obtained without additional steps by using a magnetron sputtering process to deposit a SiOx ILD. The fabricated IGZO TFTs show a subthreshold swing (SS) of 94.16 mV/decade and a linear-region field-effect mobility (mu(FE)) of 23.06 cm(2)/Vs. The channel-width-normalized source/drain series resistance (RSDW) extracted using the transmission line method (TLM) is approximately as low as 9.4 omega center dot cm. The fabricated ring oscillator (RO) with a maximum oscillation frequency of 1.75 MHz also verifies the applicability of the TFTs.
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