Highly efficient green InP-based quantum dot light-emitting diodes regulated by inner alloyed shell component

InP-based quantum dot light-emitting diodes (QLEDs), as less toxic than Cd-free and Pb-free optoelectronic devices, have become the most promising benign alternatives for the next generation lighting and display. However, the development of green-emitting InP-based QLEDs still remains a great challenge to the environmental preparation of InP quantum dots (QDs) and superior device performance. Herein, we reported the highly efficient green-emitting InP-based QLEDs regulated by the inner alloyed shell components. Based on the environmental phosphorus tris (dimethylamino)phosphine ((DMA)(3)P), we obtained highly efficient InP-based QDs with the narrowest full width at half maximum (similar to 35 nm) and highest quantum yield (similar to 97%) by inserting the gradient inner shell layer ZnSexS1-x, without further post-treatment. More importantly, we concretely discussed the effect and physical mechanism of ZnSexS1-x, layer on the performance of QDs and QLEDs through the characterization of structure, luminescence, femtosecond transient absorption, and ultraviolet photoelectron spectroscopy. We demonstrated that the insert inner alloyed shell ZnSexS1-x, provided bifunctionality, which diminished the interface defects upon balancing the lattice mismatch and tailored the energy levels of InP-based QDs which could promote the balanced carrier injection. The resulting QLEDs applying the InP/ZnSe0.7S0.3/ZnS QDs as an emitter layer exhibited a maximum external quantum efficiency of 15.2% with the electroluminescence peak of 532 nm, which was almost the highest record of InP-based pure green-emitting QLEDs. These results demonstrated the applicability and processability of inner shell component engineering in the preparation of high-quality InP-based QLEDs.

Automated summary

In this study, we reported highly efficient green-emitting InP-based QLEDs regulated by inner alloyed shell components. The insertion of a gradient inner shell layer, ZnSexS1-x, resulted in InP-based QDs with the narrowest full width at half maximum and highest quantum yield. The resulting QLEDs showed high external quantum efficiency and electroluminescence peak, which is significant for the preparation of InP-based green-emitting QLEDs.