Analysis of Noise in Current Mirror Circuits Based on CNTFET and MOSFET

In this paper we present a comparative analysis of noise performance of Carbon Nanotube Field Effect Transistors (CNTFETs) and MOSFET, through the design of two circuits: a basic current mirror and self-bias current mirror, each time with different current values. For this aim we use a semi-empirical compact CNTFET model, already proposed by us, including noise source contributions, and the BSIM4 model for MOS device. Then we analyze and discuss the spectral density of output noise current, comparing the two considered technology. The software used is Advanced Design System (ADS), compatible with the Verilog A programming language.

Automated summary

This paper presents a comparative analysis of the noise performance of CNTFETs and MOSFET through the design of circuits and the use of appropriate models. The spectral density of output noise current is compared for different current values. The study results provide a comparison of the two technologies.