Bifunctional HfOx-based Resistive Memory: Reprogrammable and One-Time Programmable (OTP) Memory

The dual functions in HfOx-based ReRAM and 2V-programmable via-fuse technology featuring in simple metal-insulator-metal BEOL process are presented, which can integrate with the current metal fuse technology. The impact of via-size, ReRAM, and via-fusing programming windows, stacked structures, and integration capability has been extensively studied. The performance and reliability risk assessments show that the ReRAM and via fuse can sustain at 438 K for 500 h without any degradation. Our results provide pathfinding of high density, integration capability, low programing voltage, multi-functionality between programmable read-only memory (PROM) and ReRAM co-existing in embedded applications.

Automated summary

This study presents the dual functions and integration capability of HfOx-based ReRAM and 2V-programmable via-fuse technology in the BEOL process. The impact of various factors on the performance and reliability of ReRAM and via fuse has been extensively studied. The results show that they can sustain at high temperatures without degradation, making them suitable for high-density and multi-functional embedded applications.