4.6 Article

Directional and Polarized Lasing Action on Pb-free FASnI3 Integrated in Flexible Optical Waveguides

Journal

ADVANCED OPTICAL MATERIALS
Volume 10, Issue 15, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.202200458

Keywords

amplified spontaneous emission; FASnI; (3); flexible substrates; lead free perovskites; PET substrate; random lasing; waveguides

Funding

  1. European Union [862656]
  2. European Research Council (ERC) [724424]
  3. Spanish MINECO [PID2020-120484RB-I00, PID2019-107314RB-I00]
  4. European Research Council (ERC) [724424] Funding Source: European Research Council (ERC)

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In this study, high-quality lead-free perovskite thin films were successfully incorporated into a flexible PET substrate to demonstrate amplified spontaneous emission (ASE) and lasing. The optimized design of the structure resulted in extremely low ASE/lasing threshold and strong polarization anisotropy for the outcoupled light.
In this work, high-quality FASnI(3) (FA, formamidinium) lead-free perovskite thin films are successfully incorporated in a flexible polyethylene terephthalate (PET) substrate to demonstrate amplified spontaneous emission (ASE) and lasing. The waveguide (WG) consists of polymethylmethacrylate(PMMA)/FASnI(3) bilayer deposited on a PET substrate and is properly designed to allow single-mode propagation at the photoluminescence wavelength. This geometry optimizes the excitation of the emitting FASnI(3), enhances the light-matter interaction in the semiconductor thin film, provides a preferable direction for the emitted light and allows its direct outcoupling for on-chip or fiber-optic applications. As far as the authors know, ASE and random lasing are obtained for the first time in a flexible-based WG integrating a highly efficient lead-free perovskite. The high quality of the deposited films and the optimized design of the structure result in an extremely low ASE/lasing threshold in the range of 1 mu J cm(-2), which is only ten times higher than that measured in the same PMMA/FASnI(3) structure deposited on a rigid substrate (Si/SiO2). More interestingly, these WGs exhibit a strong polarization anisotropy for the outcoupled ASE/lasing light with a preferable transverse electric polarization. This work is the base for the future development of ecofriendly, flexible, and efficient photonic devices.

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