Gain enhancement of BiCMOS on-chip sub-THz antennas by mean of meta-cells

A MM-loaded sub-THz on-chip antenna with a narrow beamwidth, 9 dB gain and a simulated peak efficiency of 76% at the center frequency of 300 GHz is presented. By surrounding the antenna with a single MM-cell ring defined solely on the top metal of the back-end of line, an efficient suppression of the surface waves is obtained. The on-chip antenna has been designed using IHPs 130 nm SiGe BiCMOS technology with a 7-layer metallization stack, combined with the local backside etching process aimed to creating an air cavity which is then terminated by a reflective plane. By comparing the measured MM-loaded antenna performances to its non-MM-loaded counterpart, an enhanced integrity of the main lobe due to the MM-cells shielding effect can be observed. An excellent agreement between the simulated and measured performances has been found, which makes the MM-loaded antennas a valid alternative for the upcoming next-generation sub-THz transceivers.

Automated summary

This paper presents a MM-loaded sub-THz on-chip antenna with a narrow beamwidth, 9 dB gain, and a simulated peak efficiency of 76% at 300 GHz. The antenna is surrounded by a single MM-cell ring to suppress surface waves. Comparisons between the measured and simulated performances show excellent agreement, indicating that the MM-loaded antenna is a viable alternative for next-generation sub-THz transceivers.