Controlling resistive switching behavior in the solution processed SiO2-x device by the insertion of TiO2 nanoparticles

The resistive switching behavior of the solution processed SiOx device was investigated by inserting TiO2 nanoparticles (NPs). Compared to the pristine SiOx device, the TiO2 NPs inserted SiOx (SiOx@TiO2 NPs) device achieves outstanding switching characteristics, namely a higher ratio of SET/RESET, lower operating voltages, improved cycle-to-cycle variability, faster switching speed, and multiple-RESET states. Density functional theory calculation (DFT) and circuit breaker simulation (CB) were used to detail the origin of the outstanding switching characteristic of the SiOx@TiO2 NPs. The improvement in resistive switching is mainly based on the difference in formation/rupture of the conductive path in the SiO2 and SiO2@TiO2 NPs devices. In particular, the reduction of resistance and lower switching voltage of TiO2 NPs control the formation and rupture of the conductive path to achieve more abrupt switching between SET/RESET with higher on/off ratio. This method of combined DFT calculation and CB offers a promising approach for high-performance non-volatile memory applications.

Automated summary

The resistive switching behavior of solution processed SiOx device was improved by inserting TiO2 nanoparticles. The SiOx@TiO2 NPs device showed remarkable switching characteristics including higher SET/RESET ratio, lower operating voltages, improved cycle-to-cycle variability, faster switching speed, and multiple-RESET states. The improved resistive switching was attributed to the difference in formation/rupture of the conductive path and the control of resistance and switching voltage achieved by TiO2 NPs.