Related references
Note: Only part of the references are listed.Comparison of the evolution of internal bias field of doped hafnia ferroelectric capacitors for the field-cycling reliability
Seunghyeon Hong et al.
APPLIED PHYSICS LETTERS (2021)
Defects in ferroelectric HfO2
Anastasia Chouprik et al.
NANOSCALE (2021)
Sub-nanosecond memristor based on ferroelectric tunnel junction
Chao Ma et al.
NATURE COMMUNICATIONS (2020)
Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
Furqan Zahoor et al.
NANOSCALE RESEARCH LETTERS (2020)
Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application
Zongjie Shen et al.
NANOMATERIALS (2020)
Understanding tunneling electroresistance effect through potential profile in Pt/Hf0.5Zr0.5O2/TiN ferroelectric tunnel junction memory
Jungkyu Yoon et al.
APPLIED PHYSICS LETTERS (2019)
Ferroelectric HfO2 Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process
Masaharu Kobayashi et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2019)
A High-Speed and Low-Power Multistate Memory Based on Multiferroic Tunnel Junctions
Weichuan Huang et al.
ADVANCED ELECTRONIC MATERIALS (2018)
Phase-Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization
Xian-Bin Li et al.
ADVANCED FUNCTIONAL MATERIALS (2018)
Metrology for the next generation of semiconductor devices
N. G. Orji et al.
NATURE ELECTRONICS (2018)
Thin-film ferroelectric materials and their applications
Lane W. Martin et al.
NATURE REVIEWS MATERIALS (2017)
Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric
Hyun-Seop Kim et al.
IEEE ELECTRON DEVICE LETTERS (2017)
A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction
Fabian Ambriz-Vargas et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Tunneling electroresistance effect in a Pt/Hf0.5Zr0.5O2/Pt structure
F. Ambriz-Vargas et al.
APPLIED PHYSICS LETTERS (2017)
Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si
Anna Chernikova et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions
Mohammad Abuwasib et al.
APPLIED PHYSICS LETTERS (2016)
Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO3/SrTiO3 Composite Barriers
Lingfei Wang et al.
NANO LETTERS (2016)
Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
Daniele Ielmini
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2016)
Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2 Thin Films
Everett D. Grimley et al.
ADVANCED ELECTRONIC MATERIALS (2016)
Ferroelectric HfO2-based materials for next-generation ferroelectric memories
Zhen Fan et al.
JOURNAL OF ADVANCED DIELECTRICS (2016)
Complex Internal Bias Fields in Ferroelectric Hafnium Oxide
Tony Schenk et al.
ACS APPLIED MATERIALS & INTERFACES (2015)
Ferroelectricity in undoped hafnium oxide
Patrick Polakowski et al.
APPLIED PHYSICS LETTERS (2015)
Memory leads the way to better computing
H. -S. Philip Wong et al.
NATURE NANOTECHNOLOGY (2015)
Wide tuning of the optical and structural properties of alternative plasmonic materials
Yu Wang et al.
OPTICAL MATERIALS EXPRESS (2015)
Prospective of Semiconductor Memory Devices: from Memory System to Materials
Cheol Seong Hwang
ADVANCED ELECTRONIC MATERIALS (2015)
Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey
Ee Wah Lim et al.
ELECTRONICS (2015)
Ferroelectric tunnel junctions for information storage and processing
Vincent Garcia et al.
NATURE COMMUNICATIONS (2014)
Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM)
Dmytro Apalkov et al.
ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS (2013)
Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
Dayu Zhou et al.
APPLIED PHYSICS LETTERS (2013)
Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
Ekaterina Yurchuk et al.
THIN SOLID FILMS (2013)
Ferroelectric and multiferroic tunnel junctions
E. Y. Tsymbal et al.
MRS BULLETIN (2012)
Ferroelectricity in hafnium oxide thin films
T. S. Boescke et al.
APPLIED PHYSICS LETTERS (2011)
Phase Change Memory
H. -S. Philip Wong et al.
PROCEEDINGS OF THE IEEE (2010)
Phase change memory technology
Geoffrey W. Burr et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2010)
Tunneling electroresistance in ferroelectric tunnel junctions with a composite barrier
M. Ye. Zhuravlev et al.
APPLIED PHYSICS LETTERS (2009)
Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale
A. Gruverman et al.
NANO LETTERS (2009)
Electrical observations of filamentary conductions for the resistive memory switching in NiO films
D. C. Kim et al.
APPLIED PHYSICS LETTERS (2006)
Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip
WJ Gallagher et al.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT (2006)