Journal
MATERIALS
Volume 15, Issue 6, Pages -Publisher
MDPI
DOI: 10.3390/ma15062251
Keywords
FTJ; ferroelectric; non-volatile memory
Categories
Funding
- National Research Foundation of Korea (NRF) - Ministry of Science and ICT (MSIT, Korea) [2022R1A2C1007013]
- Korea Institute for Advancement of Technology (KIAT) [P0008458]
- Korea Polytechnic University
- National Research Foundation of Korea [2022R1A2C1007013] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This study proposes a Si-doped HfO2-based FTJ device with a metal-ferroelectric-insulator-semiconductor (MFIS) structure to maximize the tunneling electro-resistance (TER) effect. The potential barrier modulation effect is analyzed, and its potential as a non-volatile memory device is demonstrated through stability assessments.
Ferroelectric tunnel junctions (FTJs) have attracted attention as devices for advanced memory applications owing to their high operating speed, low operating energy, and excellent scalability. In particular, hafnia ferroelectric materials are very promising because of their high remanent polarization (below 10 nm) and high compatibility with complementary metal-oxide-semiconductor (CMOS) processes. In this study, a Si-doped HfO2-based FTJ device with a metal-ferroelectric-insulator-semiconductor (MFIS) structure was proposed to maximize the tunneling electro-resistance (TER) effect. The potential barrier modulation effect under applied varying voltage was analyzed, and the possibility of its application as a non-volatile memory device was presented through stability assessments such as endurance and retention tests.
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