CdS-Decorated Porous Anodic SnOx Photoanodes with Enhanced Performance under Visible Light

Electrochemically generated nanoporous tin oxide films have already been studied as photoanodes in photoelectrochemical water splitting systems. However, up to now, the most significant drawback of such materials was their relatively wide band gap (ca. 3.0 eV), which limits their effective performance in the UV light range. Therefore, here, we present for the first time an effective strategy for sensitization of porous anodic SnOx films with another narrow band gap semiconductor. Nanoporous tin oxide layers were obtained by simple one-step anodic oxidation of metallic Sn in 1 M NaOH followed by further surface decoration with CdS by the successive ionic layer adsorption and reaction (SILAR) method. It was found that the nanoporous morphology of as-anodized SnOx is still preserved after CdS deposition. Such SnOx/CdS photoanodes exhibited enhanced photoelectrochemical activity in the visible range compared to unmodified SnOx. However, the thermal treatment at 200 degrees C before the SILAR process was found to be a key factor responsible for the optimal photoresponse of the material.

Automated summary

This study presents an effective strategy for enhancing the photoelectrochemical activity of nanoporous tin oxide films by sensitizing them with a narrow band gap semiconductor, CdS. The nanoporous structure of tin oxide films is retained after CdS deposition, and the thermal treatment at 200 degrees C is found to be crucial for optimal photoresponse.