4.6 Article

Effect of Threading Dislocations on the Electronic Structure of La-Doped BaSnO3 Thin Films

Journal

MATERIALS
Volume 15, Issue 7, Pages -

Publisher

MDPI
DOI: 10.3390/ma15072417

Keywords

perovskite oxide; barium stannate (BaSnO3); photoemission spectroscopy; threading dislocation; bandgap renormalization

Funding

  1. National Research Foundation of Korea (NRF) - Korean government [NRF-2019R1A2C2090648]
  2. Samsung Electronics Co., Ltd. [0409-20200269]
  3. Korea Basic Science Institute (National Research Facilities and Equipment Center) - Ministry of Education [2021R1A6C101B418]
  4. National Research Foundation of Korea [2021R1A6C101B418] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

Ask authors/readers for more resources

This study comparatively investigates the electrical properties and electronic structure of (Ba,La)SnO3 films on different substrates. The results show that threading dislocations significantly reduce the carrier density and electron mobility in the films. Furthermore, the effect of threading dislocations on the binding energies of the Sn 3d core level and the valence band maximum is different, leading to the suppression of band gap renormalization.
In spite of great application potential as transparent n-type oxides with high electrical mobility at room temperature, threading dislocations (TDs) often found in the (Ba,La)SnO3 (BLSO) films can limit their intrinsic properties so that their role in the physical properties of BLSO films need to be properly understood. The electrical properties and electronic structure of BLSO films grown on SrTiO3 (001) (STO) and BaSnO3 (001) (BSO) substrates are comparatively studied to investigate the effect of the TDs. In the BLSO/STO films with TD density of similar to 1.32 x 10(11) cm(-2), n-type carrier density ne and electron mobility are significantly reduced, as compared with the BLSO/BSO films with nearly no TDs. This indicates that TDs play the role of scattering-centers as well as acceptor-centers to reduce n-type carriers. Moreover, in the BLSO/STO films, both binding energies of an Sn 3d core level and a valence band maximum are reduced, being qualitatively consistent with the Fermi level shift with the reduced n-type carriers. However, the reduced binding energies of the Sn 3d core level and the valence band maximum are clearly different as 0.39 and 0.19 eV, respectively, suggesting that the band gap renormalization preexisting in proportion to n(e) is further suppressed to restore the band gap in the BLSO/STO films with the TDs.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available