Journal
MATERIALS
Volume 15, Issue 5, Pages -Publisher
MDPI
DOI: 10.3390/ma15051916
Keywords
Ni-Mn-Ga thin films; magnetically-induced reorientation; ferromagnetic shape memory alloys; crystallography
Categories
Funding
- National Natural Science Foundation of China [52071071, 52171005]
- Program of Introducing Talents of Discipline Innovation to Universities 2.0 (the 111 Project of China 2.0) [BP0719037]
- Fundamental Research Funds for the Central Universities of China [N2102006]
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Epitaxial Ni-Mn-Ga thin films with <1 1 0>(A) orientation were studied, showing 7M martensite and twin interfaces parallel to the substrate surface.
Epitaxial Ni-Mn-Ga thin films have been extensively investigated, due to their potential applications in magnetic micro-electro-mechanical systems. It has been proposed that the martensitic phase in the < 1 1 0 >(A)-oriented film is much more stable than that in the < 1 0 0 >(A)-oriented film. Nevertheless, the magnetic properties, microstructural features, and crystal structures of martensite in such films have not been fully revealed. In this work, the < 1 1 0 >(A)-oriented Ni51.0Mn27.5Ga21.5 films with different thicknesses were prepared by epitaxially growing on Al2O3(1 1 2 over bar 0) substrate by magnetron sputtering. The characterization by X-ray diffraction technique and transmission electron microscopy revealed that all the Ni51.0Mn27.5Ga21.5 films are of 7M martensite at the ambient temperature, with their Type-I and Type-II twinning interfaces nearly parallel to the substrate surface.
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