λ/30 inorganic features achieved by multi-photon 3D lithography

It's critically important to construct arbitrary inorganic features with high resolution. As an inorganic photoresist, hydrogen silsesquioxane (HSQ) has been patterned by irradiation sources with short wavelength, such as EUV and electron beam. However, the fabrication of three- dimensional nanoscale HSQ features utilizing infrared light sources is still challenging. Here, we demonstrate femtosecond laser direct writing (FsLDW) of HSQ through multi-photon absorption process. 26 nm feature size is achieved by using 780 nm fs laser, indicating super-diffraction limit photolithography of lambda/30 for HSQ. HSQ microstructures by FsLDW possess nanoscale resolution, smooth surface, and thermal stability up to 600 degrees C. Furthermore, we perform FsLDW of HSQ to construct structural colour and Fresnel lens with desirable optical properties, thermal and chemical resistance. This study demonstrates that inorganic features can be flexibly achieved by FsLDW of HSQ, which would be prospective for fabricating micro-nano devices requiring nanoscale resolution, thermal and chemical resistance. Stereolithography has progressed over the years but resolution and feature size is still limited by the properties of materials and resins. Here, the authors demonstrate femtosecond laser direct writing of a hydrogen silsesquioxane photoresist using a 780 nm femtosecond laser demonstrating feature sizes of 26 nm.

Automated summary

In this study, the high-resolution fabrication of hydrogen silsesquioxane (HSQ) using femtosecond laser direct writing (FsLDW) was demonstrated. A feature size of 26 nm in HSQ was achieved using a 780 nm femtosecond laser. The HSQ microstructures fabricated by FsLDW showed nanoscale resolution, smooth surface, and high thermal stability, indicating potential application in the fabrication of micro-nano devices.