Dual-gated single-molecule field-effect transistors beyond Moore's law

Conventional silicon-based transistors, which sit at the heart of every computer, are fast approaching the limit of miniaturisation. Here, Meng et al demonstrate a field-effect transistor composed of a single rutheniumdiarylethene molecule with large on/off ratio. As conventional silicon-based transistors are fast approaching the physical limit, it is essential to seek alternative candidates, which should be compatible with or even replace microelectronics in the future. Here, we report a robust solid-state single-molecule field-effect transistor architecture using graphene source/drain electrodes and a metal back-gate electrode. The transistor is constructed by a single dinuclear ruthenium-diarylethene (Ru-DAE) complex, acting as the conducting channel, connecting covalently with nanogapped graphene electrodes, providing field-effect behaviors with a maximum on/off ratio exceeding three orders of magnitude. Use of ultrathin high-k metal oxides as the dielectric layers is key in successfully achieving such a high performance. Additionally, Ru-DAE preserves its intrinsic photoisomerisation property, which enables a reversible photoswitching function. Both experimental and theoretical results demonstrate these distinct dual-gated behaviors consistently at the single-molecule level, which helps to develop the different technology for creation of practical ultraminiaturised functional electrical circuits beyond Moore's law.

Automated summary

The study presents a robust solid-state single-molecule field-effect transistor using graphene electrodes and a metal back-gate electrode. The transistor exhibits high on/off ratio and reversible photoswitching function, making it a potential alternative to conventional silicon-based transistors.