Journal
IEEE PHOTONICS JOURNAL
Volume 14, Issue 2, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2022.3160226
Keywords
Logic gates; Silicon; Light emitting diodes; Microdisplays; Junctions; Metals; Standards; All-Silicon CMOS LED microdisplay gate-control
Funding
- National Natural Science Foundation of China [62174018]
- National Key Research and Development Program of China [2018YFE0181500]
- Sichuan Province's Science Fund for Distinguished Young Scholars [2020JDJQ0022]
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A low voltage all silicon microdisplay based on MOS-like gate-control all-Silicon LED is presented, which is designed with a PN alternate structure and polysilicon gate control electrode for high luminous intensity and low operating voltage.
A low voltage all silicon microdisplay is presented based on MOS-like gate-control all-Silicon light-emitting diode (LED) in standard 0.18 mu m complementary metal oxide semiconductor (CMOS) technology. The MOS-like LED is designed under a PN alternate structure with polysilicon gate control electrode for high luminous intensity and low operating voltage. The microdisplay device is fabricated based on the LED as pixel units. The size of the proposed microdisplay device is 6.2 mm x 5.0 mm with a about 368 mW/mm2 luminous intensity at the stable operating voltage of 1.8 V.
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