Journal
IEEE PHOTONICS JOURNAL
Volume 14, Issue 3, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2022.3164943
Keywords
Photodetectors; Germanium; Metals; Strain; Silicon; Optical waveguides; Plasma temperature; Germanium-tin alloys; germanium-tin on insulator; metal-semiconductor-metal photodetector
Funding
- National Research Foundation, Singapore, through Competitive Research Program under CRP Award [NRF-CRP19-2017-01]
- Ministry of Education AcRF Tier 2 [T2EP50121-0001, MOR-000180-01]
- Ministry of Education AcRF Tier 1 [2021-T1-002-031, RG112/21]
Ask authors/readers for more resources
This work demonstrates metal-semiconductor-metal photodetectors on the Ge0.91Sn0.09-on-insulator (GeSnOI) platform, with the potential to detect wavelengths beyond 2,200 nm, low dark current density, and high bandwidth.
In this work, the metal-semiconductor-metal photodetectors were demonstrated on the Ge0.91Sn0.09-on-insulator (GeSnOI) platform. The responsivity was 0.24 and 0.06 A/W at wavelengths of 1,600 and 2,003 nm, respectively. Through a systematic study, it is revealed that the photodetectors can potentially detect wavelength beyond 2,200 nm. The dark current density was measured to be 4.6 A/cm(2) for GeSnOI waveguide-shaped photodetectors. The 3 dB bandwidth was observed to be 1.26 and 0.81 GHz at 1,550 and 2,000 nm wavelengths, respectively. This work opens up an opportunity for low-cost 2 mu m wavelength photodetection on the GeSn/Ge interface-free GeSnOI platform.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
