Characterization of Eu doped ZnO micropods prepared by chemical bath deposition on p-Si substrate

The chemical bath deposition method was used to synthesize Eu-doped ZnO on p-type (100) silicon. The SEM image shows the formation of micropod-like ZnO. EDX and XPS measurements showed an increase in the Eu concentration up to 2.54% and the simultaneous presence of Eu3+ and Eu2+. XRD analysis confirmed that the interstitial Eu3+ ions distorted the four tetrahedral bonds, and the substitution of Eu 2+ ions increased the c lattice parameter. Only Eu3+ D-5(0) -> F-7(2) transition-related emission was observed, so a weak transfer energy from the ZnO matrix to the Eu ion occurred. However, the competition between the emission of deep-level defects in the host matrix and that of Eu3+ ions deforms the visible emission towards the red color. The I-V measurements of the Eu-ZnO/p-Si heterojunctions showed diode-like behavior with a low rectification ratio and a barrier height around 0.84 eV not affected by the Eu concentration.

Automated summary

The chemical bath deposition method was used to synthesize Eu-doped ZnO on p-type (100) silicon. The SEM image showed micropod-like ZnO formation. EDX and XPS measurements confirmed the concentration and presence of Eu ions. XRD analysis revealed the distortion of tetrahedral bonds and the lattice parameter change due to the Eu ions. Only Eu3+ emission was observed, indicating weak energy transfer. The emission of deep-level defects and Eu3+ ions caused a shift towards red color. The I-V measurements showed diode-like behavior with a constant barrier height.