Thermoelectric properties of β-(Cu,Mn)2Se films with high (111) preferred orientation

Mn-doped beta-Cu2Se films were prepared on a single-crystalline Si substrate with an insulating SiO2 layer using a sintered Cu-Se compound target by magnetron sputtering. The phase composition, microstructure and thermoelectric properties of deposited films were studied. The results show that the films are composed of only single beta-Cu2Se phase with highly (111) referred orientation. Mn replaces Cu atom in beta-Cu2Se lattice and beta-(Cu,Mn)(2)Se solid solution forms. In the deposited beta-Cu2Se films doping Mn, the atomic ratio ([Cu]+[Mn])/[Se] of Cu + Mn to Se content exceeds 2.0. The deposited beta-(Cu,Mn)(2)Se films possess p-type conductivity characteristics. The carrier concentration decreases and the carrier mobility increases with increasing Mn content, respectively. The resistivity and Seebeck coefficient of the deposited films increase with increasing Mn content. The film with 1.94 at.% Mn possesses the highest power factor in the range of 100-400 degrees C and its figure of merit (ZT) reaches 0.85 at room temperature. The thermoelectric properties of the beta-Cu2Se`c films are able to be improved by doping an appropriate amount of Mn and obtaining highly (111) preferred orientation.

Automated summary

The Mn-doped beta-Cu2Se films deposited on a single-crystalline Si substrate exhibit excellent thermoelectric properties, with the resistivity and Seebeck coefficient increasing, carrier concentration decreasing, and carrier mobility increasing with increasing Mn content. The film with 1.94 at.% Mn shows the highest power factor and a figure of merit (ZT) of 0.85 at room temperature, demonstrating the potential to improve the thermoelectric properties of beta-Cu2Se films by doping Mn and obtaining a highly preferred orientation.