Superior electron transport of ultra-thin SiC nanowires with one impending tensile monatomic chain

The effect of the tensile strain on the electron transport are studied theoretically for ultra-thin SiC Nanowires (NWs) with different diameters. Results show that these NWs exhibit distinctive and non-traditional stress-strain curves, characterized by multistage fluctuations. The tension greatly affects the electron transport. The strongest transmission appears when the wire is stretched to the near-emergence of the monatomic chain in the necking place (especially for thicker SiC NWs) which suppresses the electron transport, essentially originating from localized transmission eigenstates and pathways. This work provides an approach to enhance the electron transport and strong backing in promising applications of nanoelectronics and nano-piezoelectric devices for ultra-thin SiC NWs.

Automated summary

Theoretical study has been conducted on the effect of tensile strain on electron transport in ultra-thin SiC nanowires (NWs) with different diameters. The results reveal that these NWs exhibit distinctive stress-strain curves with multistage fluctuations and the tension greatly affects electron transport. The strongest transmission occurs when the wire is stretched to the near-emergence of the monatomic chain in the necking place, especially for thicker SiC NWs, due to localized transmission eigenstates and pathways. This work provides an approach to enhance electron transport and support applications of nanoelectronics and nano-piezoelectric devices using ultra-thin SiC NWs.