Stability of Mn2RuxGa-based multilayer stacks

Perpendicular heterostructures based on a ferrimagnetic Mn2RuxGa(MRG) layer and a ferromagnetic Co/Pt multilayer were examined to understand the effects of different spacer layers (V, Mo, Hf, HfOx and TiN) on the interfaces with the magnetic electrodes, after annealing at 350?. Loss of perpendicular anisotropy in MRG is strongly correlated with a reduction in the substrate-induced tetragonality due to relaxation of the crystal structure. In the absence of diffusion, strain and chemical ordering within MRG are correlated. The limited solubility of both Hf and Mo in MRG is a source of additional valence electrons, which results in an increase in compensation temperature T-comp. This also stabilises perpendicular anisotropy, compensating for changes in strain and defect density. The reduction in squareness of the MRG hysteresis loop measured by anomalous Hall effect is < 10%, making it useful in active devices. Furthermore, a CoPt3 phase with (220) texture in the perpendicular Co/Pt free layer promoted by a Mo spacer layer is the only one that retains its perpendicular anisotropy on annealing.

Automated summary

Examined the effects of different spacer layers on the interfaces between ferrimagnetic and ferromagnetic materials. The loss of perpendicular anisotropy in the ferrimagnetic material is related to the relaxation of the crystal structure. The limited solubility of certain elements provides additional valence electrons, stabilizing the perpendicular anisotropy and compensating for changes in strain and defect density. The Mo spacer layer promotes the formation of a phase that retains its perpendicular anisotropy.