Energy storage behavior in flexible antiferroelectric (Pb0.98,La0.02)(Zr0.95, Ti0.05)O3 thin film capacitors prepared via a direct epitaxial lift-off method

Flexible antiferroelectric (AFE) thin film capacitors are important for foldable and wearable electronics. This work demonstrates a direct epitaxial lift-off method to fabricate flexible epitaxial AFE thin film capacitors using (Pb-0.98,La-0.02)(Zr-0.95,Ti-0.05)O-3 (PLZT) as an example. The flexible PLZT thin film showed the tetragonal structure with coexisting ferroelectricity and antiferroelectricity. An energy storage density (ESD) of 2.6 J/cm(3) with an efficiency of 73% was obtained at the low electric field, and a high ESD of 22 J/cm(3) with an efficiency of 33% was achieved at the high electric field. Such energy storage performances could be maintained after 10(3) bending cycles and 105 charging/discharging cycles. This simple method can be used to compose flexible epitaxial thin film capacitors and even other flexible thin film devices.

Automated summary

This work demonstrates a direct epitaxial lift-off method to fabricate flexible epitaxial antiferroelectric thin film capacitors with high energy storage density and efficiency at both low and high electric fields. The flexible thin film capacitors also exhibit excellent cycling stability. This method can be applied to other flexible thin film devices.