Rb-induced (3 x 1) and (6 x 1) reconstructions on Si(111)-(7 x 7): A LEED and STM study

We present a study of rubidium adsorption on the Si(111)-(7 x 7) surface and the related Rb-induced re-constructions as a function of deposition temperature and Rb-coverage via scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). Sample analysis via LEED allowed to observe for the first time a Rb/ Si(111)-(6 x 1) reconstruction. STM allowed to obtain the first real space characterization of the Rb/Si(111)-(3 x 1) surface. In addition, STM provided a direct and local information on the surface arrangement as well as further insight on the interactions between Si and Rb atoms and on the growth dynamics.

Automated summary

In this study, rubidium adsorption and re-constructions on the Si(111)-(7 x 7) surface were investigated using STM and LEED. The effects of deposition temperature and Rb-coverage on the surface structures were observed. STM provided detailed information on the real space characterization of the Rb/Si(111)-(3 x 1) surface. These findings are important for understanding the behavior of rubidium on Si surfaces and have implications for applications in nanodevice fabrication.