4.2 Article

.FIRST-PRINCIPLES SIMULATION: STUDY OF THE STRUCTURAL, ELECTRONIC, MECHANICAL AND OPTICAL PROPERTIES OF DISULFIDE XS2 (X = Ta, Ti) COMPOUNDS FOR OPTOELECTRONIC APPLICATIONS

Journal

SURFACE REVIEW AND LETTERS
Volume 29, Issue 6, Pages -

Publisher

WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S0218625X22500834

Keywords

Ultraviolet; projected density; TDOS; absorptivity; PBE-GGA functional

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This article uses density functional theory and first-principles simulation to study the structural, electronic, and optical properties of two disulfide compounds. The results are in agreement with experimental values and show the potential of these compounds in optoelectronic device applications.
First-principles simulation has been performed to investigate the structural, electronic and optical properties of two disulfide compounds, i.e. XS2 (X = Ta, Ti). The properties are examined through the density functional theory (DFT) with the implementation of Cambridge series total energy package (CASTEP) code. As regards, the structural and electronic analyses are done by Perdew-Burke-Ernzerhof-generalized gradient approximation (PBE-GGA) and hybrid Heyd-Scuseria-Ernzerhof (HSE06) functional and their results are compared herewith. The values of lattice parameters obtained through geometry optimization for TaS2 with GGA and HSE06 are a = b = 3.27 angstrom and c = 12.89 angstrom and a = b = 3.31 angstrom and c = 12.09 angstrom, respectively, while for TiS2 these parameters are found as a = b = 3.39 angstrom and c = 5.69 angstrom. These values are found in agreement with the experimental values. The electronic band structure, as well as density of states (DOS) of these structures, show their semiconducting nature with the direct bandgap of 1.9 eV (PBE-GGA) and 2.05 eV (HSE06) for TaS2 and 0.09 eV (PBE-GGA) and 0.13 eV (HSE06) for TiS2. The mechanical study of these compounds also has been anticipated using Voigt-Reuss-Hill approximation under the pressure range 0-30 GPa to show their stability by calculating the elastic parameters, i.e. Young's modulus, bulk and shear modulus, Poisson's ratio, Pugh's ratio and anisotropic factor. The analysis of optical properties divulges that TiS2 material possesses maximum absorptivity in the UV range of incident photon's energy with minimum energy loss and decrease in reflectivity. Our comprehensive study about the considered compounds delineates them as potential candidates for technological applications in optoelectronic devices.

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