Uniform deposition of silicon oxide film on cylindrical substrate by radially arranged plasma jet array

In this work, the SiOx film was deposited on a cylindrical substrate by a radially arranged plasma jet array generated by an AC power supply. The properties of deposited SiOx film were studied systematically, including surface morphology, film thickness, elemental composition and chemical structure. Besides, the effect of surface modification on insulation improvement in a gas insulated transmission line (GIL) system was verified. The discharge uniformity of the plasma jet array was improved by adding ballast resistor in the series circuit. Our results showed that the SiOx films were composed with Si-O-Si group dominated by network structure along with a small amount of Si-OH group and inorganic groups (-CH2, Si-CH3). The film deposited by plasma jet array showed good uniformity on thickness and element composition. The lift-off voltage of metal particle improved by about 120.88% after SiOx film deposition. Our results provide a universal surface modification method for cylindrical substrate under mild conditions.

Automated summary

In this study, SiOx films were deposited on a cylindrical substrate using a radially arranged plasma jet array. The properties of the deposited films, including surface morphology, film thickness, elemental composition, and chemical structure, were systematically studied. The effect of surface modification on insulation improvement in a gas insulated transmission line system was also investigated. The results showed that the plasma jet array deposition method could produce SiOx films with good uniformity and improved insulation performance.