4.7 Article

Industrial metallization of fired passivating contacts for n-type tunnel oxide passivated contact (n-TOPCon) solar cells

Journal

SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 240, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.solmat.2022.111692

Keywords

Fired passivating contacts; TOPCon; Screen-printing; Plating; LPCVD; In situ phosphorus doping

Funding

  1. European Union [857793]
  2. Kuwait Foundation for the Advancement of Sciences [CN18-15EE-01]

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Poly-Si/SiOx passivating contacts are important for highly-efficient Si solar cells. Their fabrication usually involves extra high-temperature processes, but a fired passivating contact (FPC) approach eliminates this step. The compatibility of FPCs with metallization techniques is still a challenge.
Poly-Si/SiOx passivating contacts enable the manufacturing of highly-efficient Si solar cells, but their fabrication commonly relies on an extra high-temperature process such as dopant diffusion or thermal annealing for achieving excellent passivation and contacting properties. This extra process is eliminated in the fired passivating contact (FPC) approach used for simplified fabrication of poly-Si/SiOx passivating contacts. Instead, FPCs rely on the thermal budget of the fast/short and high-temperature firing process used for metallization of solar cells to achieve similar final properties. Despite this, compatibility of FPCs with industrially viable metallization techniques has not been demonstrated yet, which is studied in this work for fire-through Ag screen-printing and Ni/Ag plating. With screen-printing, low recombination current density (J(0)) down to 4.9 fA/cm(2), low contact resistivity between the Ag contacts and the FPC (rho(c,m)) down to 7.2 m Omega.cm(2), and Ohmic transport through the FPC including the SiOx film were achieved using wet-chemically grown SiOx. Nevertheless, J(0) of metallized regions (J(0,m)) exceeded 1000 fA/cm(2). Reducing J(0,m) was attempted by mitigating the blistering observed in FPCs, but J(0,m) remained high. With Ni/Ag plating, excellent surface passivation with J(0) down to 2.7 fA/cm(2) and very low J(0,m) < 50 fA/cm(2) were achieved, but no Ohmic contacts could be obtained. Integration of screen-printed FPCs in large-area n-TOPCon solar cells was also demonstrated, yielding average efficiencies of 18.4%, limited mainly by the high J(0,) (m) and series resistance of the FPCs. The results presented reveal the challenges for the industrialization of FPCs and provide valuable insights for tackling these.

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