Journal
SMALL
Volume 18, Issue 20, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.202107938
Keywords
FeNiOOH co-catalysts; hole transfer; interface recombination; oxygen vacancies; reduction
Categories
Funding
- National Natural Science Foundation of China [22174110, 22127803]
- Industrial Support Plan of Gansu Provincial Department of Education [2021cyzc-01]
- Special Fund Project for Guiding Local Scientific and Technological Development by the Central Government [2020-2060503-17]
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This study investigates the coupling of FeNiOOH co-catalyst with BiVO4 electrode to enhance the photoelectrochemical conversion efficiency. The co-catalyst fabrication with abundant oxygen vacancies accelerates hole transfer and achieves efficient electron-hole pair separation. The strategy demonstrates improved charge transfer kinetics and suppressed charge carrier recombination.
Semiconductor/co-catalyst coupling is considered as a promising strategy to enhance the photoelectrochemical (PEC) conversion efficiency. Unfortunately, this model system is faced with a serious interface recombination problem, which limits the further improvement of PEC performances. Here, a FeNiOOH co-catalyst with abundant oxygen vacancies on BiVO4 is fabricated through simple and economical NaBH4 reduction to accelerate hole transfer and achieve efficient electron-hole pair separation. The photocurrent of the BV (BiVO4)/Vo-FeNiOOH system is more than four times that of pure BV. Importantly, the charge transfer kinetics and charge carrier recombination process are studied by scanning photoelectrochemical microscopy and intensity modulated photocurrent spectroscopy in detail. In addition, the oxygen vacancy regulation proposed is also applied successfully to other semiconductors (Fe2O3), demonstrating the applicability of this strategy.
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