Filament Engineering of Two-Dimensional h-BN for a Self-Power Mechano-Nociceptor System

The switching variability caused by intrinsic stochasticity of the ionic/atomic motions during the conductive filaments (CFs) formation process largely limits the applications of diffusive memristors (DMs), including artificial neurons, neuromorphic computing and artificial sensory systems. In this study, a DM device with improved device uniformity based on well-crystallized two-dimensional (2D) h-BN, which can restrict the CFs formation from three to two dimensions due to the high migration barrier of Ag+ between h-BN interlayer, is developed. The BN-DM has potential arrayable feature with high device yield of 88%, which can be applied for building a reservoir computing system for digital pattern recognition with high accuracy rate of 96%, and used as an artificial nociceptor to sense the external noxious stimuli and mimic the important biological nociceptor properties. By connecting the BN-DM to a self-made triboelectric nanogenerator (TENG), a self-power mechano-nociceptor system, which can successfully mimic the important nociceptor features of threshold, relaxation and allodynia is designed.

Automated summary

In this study, a diffusive memristor with improved device uniformity was developed using well-crystallized 2D h-BN. The CFs formation was restricted to two dimensions, allowing for potential arrayability and high device yield. The memristor can be used for digital pattern recognition and to mimic biological nociceptor properties.