MIS-Like Structures with Silicon-Rich Oxide Films Obtained by HFCVD: Their Response as Photodetectors

MIS-type structures composed of silicon-rich oxide (SRO), thin films deposited by hot filament chemical vapor deposition (HFCVD), show interesting I-V and I-t properties under white light illumination and a response as photodetectors. From electrical measurements, it was found that at a reverse bias of -4 V, the illumination current increased by up to three orders of magnitude relative to the dark current, which was about 82 nA, while the photogenerated current reached a value of 25 mu A. The reported MIS structure with SRO as the dielectric layer exhibited a hopping conduction mechanism, and an ohmic conduction mechanism was found with low voltage. I-t measurements confirmed the increased photogenerated current. Furthermore, the MIS structure, characterized by current-wavelength (I-lambda) measurements, exhibited a maximum responsivity value at 254 mA/W, specific detectivity (D*) at 2.21 x 10(11) cm Hz(1/2) W-1, and a noise equivalent power (NEP) of 49 pW at a wavelength of 535 nm. The structure exhibited good switching behavior, with rise and fall times between 120 and 150 ms, respectively. These rise and decay times explain the generation and recombination of charge carriers and the trapping and release of traps, respectively. These results make MIS-type structures useful as photodetectors in the 420 to 590 nm range.

Automated summary

The study showed that MIS-type structures exhibit good I-V and I-t properties under white light illumination and serve as responsive photodetectors. Electrical measurements revealed a significant increase in photocurrent under reverse bias. The structures demonstrate excellent responsivity and specific detectivity values, making them suitable for photodetection applications.