Investigation of resistive switching in lead-free bismuth-silver halide double perovskite

In this work, lead-free double perovskite Cs2BiAgBr6 film is fabricated and employed into resistive switching (RS) memory device with a metal/insulator/metal structure. The RS performances of the prepared device are examined both experimentally and theoretically. High-quality Cs2BiAgBr6 film is fabricated via a post-vacuum treatment and characterized systematically. In the prepared memory device, bipolar RS is observed with a high ON/OFF ratio, and the retention and endurance performances are measured. First-principles calculations based on the density functional theory reveal that the bromide vacancies (V-Br) in Cs2BiAgBr6 render it metallic characteristics. Therefore, we propose that the migration of V-Br under electrical fields formed and ruptured the conductive filament, leading to the RS behaviors of memory device.

Automated summary

This study fabricates lead-free double perovskite Cs2BiAgBr6 film and utilizes it in a resistive switching memory device. The experimental and theoretical analyses demonstrate excellent resistive switching performances of the prepared device. High-quality Cs2BiAgBr6 film is fabricated through post-vacuum treatment and shows bipolar resistive switching behavior in the memory device.