Monte Carlo simulations of spin transport in nanoscale In0.7Ga0.3As transistors: temperature and size effects

Spin-based metal-oxide-semiconductor field-effect transistors (MOSFETs) with a high-mobility III-V channel are studied using self-consistent quantum corrected ensemble Monte Carlo device simulations of charge and spin transport. The simulations including spin-orbit coupling mechanisms (Dresselhaus and Rashba coupling) examine the electron spin transport in the 25 nm gate length In0.7Ga0.3As MOSFET. The transistor lateral dimensions (the gate length, the source-to-gate, and the gate-to-drain spacers) are increased to investigate the spin-dependent drain current modulation induced by the gate from room temperature of 300 K down to 77 K. This modulation increases with increasing temperature due to increased Rashba coupling. Finally, an increase of up to 20 nm in the gate length, source-to-gate, or the gate-to-drain spacers increases the spin polarization and enhances the spin-dependent drain current modulation at the drain due to polarization-refocusing effects.

Automated summary

In this study, spin-based metal-oxide-semiconductor field-effect transistors (MOSFETs) with a high-mobility III-V channel were investigated using self-consistent quantum corrected ensemble Monte Carlo device simulations. The simulations examined the role of spin-orbit coupling mechanisms in electron spin transport in the MOSFET and showed that the spin-dependent drain current modulation can be controlled by adjusting the transistor lateral dimensions and temperature.