Related references
Note: Only part of the references are listed.A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss
Moufu Kong et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)
Design and fabrication of high performance 4H-SiC TJBS diodes
Wentao Dou et al.
JOURNAL OF CRYSTAL GROWTH (2020)
Defect engineering in SiC technology for high-voltage power devices
Tsunenobu Kimoto et al.
APPLIED PHYSICS EXPRESS (2020)
Improving Surge Current Capability of SiC Merged PiN Schottky Diode by Adding Plasma Spreading Layers
Na Ren et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2020)
1.2-kV 4H-SiC Merged PiN Schottky Diode With Improved Surge Current Capability
Jiupeng Wu et al.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS (2019)
An Optimized 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier
Ying Wang et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2018)
Effect of trench structure on reverse characteristics of 4H-SiC junction barrier Schottky diodes
Kumiko Konishi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2017)
Unbalanced Layout Method for the 4H-SiC JBS Diode Offering Improved Tradeoff between Leakage Current and ON-Resistance
Jongmin Geum et al.
IEEE ELECTRON DEVICE LETTERS (2016)
Self-aligned formation of the trench bottom shielding region in 4H-SiC trench gate MOSFET
Takahito Kojima et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Design and Experimental Study of 4H-SiC Trenched Junction Barrier Schottky Diodes
Na Ren et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2014)
A Survey of Wide Bandgap Power Semiconductor Devices
Jose Millan et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2014)
Precision milling of high volume fraction SiCp/Al composites with monocrystalline diamond end mill
R. Bian et al.
INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY (2014)
Electrical Characteristics of Large Chip-size 3.3 kV SiC-JBS Diodes
Hiroyuki Okino et al.
SILICON CARBIDE AND RELATED MATERIALS 2012 (2013)
Experimental 4H-SiC junction-barrier Schottky (JBS) diodes
P. A. Ivanov et al.
SEMICONDUCTORS (2009)
Analytical modeling of high-voltage 4H-SiC junction barrier Schottky (JBS) rectifiers
Lin Zhu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2008)
Schottky versus bipolar 3.3 kV SiC diodes
A. Perez-Tomas et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2008)
Commercial SiC device processing: Status and requirements with respect to SiC based power devices
M. Treu et al.
SUPERLATTICES AND MICROSTRUCTURES (2006)
SiC power Schottky and PiN diodes
R Singh et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2002)
The future of bipolar power transistors
AQ Huang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2001)