4.5 Article

High power high voltage bias-T for half wave resonators and radio frequency quadrupole couplers

Journal

REVIEW OF SCIENTIFIC INSTRUMENTS
Volume 93, Issue 5, Pages -

Publisher

AIP Publishing
DOI: 10.1063/5.0086965

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This study presents the development of high power high voltage bias-T units at the Soreq Nuclear Research Center for the Soreq Applied Research Accelerator Facility linac. Two separate units were designed for different types of couplers, aiming to prevent multipacting phenomena by applying a high voltage DC bias. Successful offline and online tests were conducted.
High power high voltage bias-T units capable of delivering up to 100 kW CW RF power at 176 MHz and up to 4 kV DC were developed at the Soreq Nuclear Research Center for the Soreq Applied Research Accelerator Facility linac. Two separate bias-T units with different requirements were designed for the radio frequency quadrupole couplers and the half wave resonator couplers. The purpose of this bias-T is to prevent multipacting phenomena by application of a high voltage DC bias to inner conductors of RF couplers. Underlying design principles, indigenous development, and successful off-line and on-line tests results are presented.

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