Journal
JOURNAL OF APPLIED PHYSICS
Volume 119, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4943261
Keywords
-
Categories
Funding
- U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
Ask authors/readers for more resources
Solar-blind photodetection and photoconductive gain >50 corresponding to a responsivity >8 A/W were observed for beta-Ga2O3 Schottky photodiodes. The origin of photoconductive gain was investigated. Current-voltage characteristics of the diodes did not indicate avalanche breakdown, which excludes carrier multiplication by impact ionization as the source for gain. However, photocapacitance measurements indicated a mechanism for hole localization for above-band gap illumination, suggesting self-trapped hole formation. Comparison of photoconductivity and photocapacitance spectra indicated that self-trapped hole formation coincides with the strong photoconductive gain. It is concluded that self-trapped hole formation near the Schottky diode lowers the effective Schottky barrier in reverse bias, producing photoconductive gain. Ascribing photoconductive gain to an inherent property like self-trapping of holes can explain the operation of a variety of beta-Ga2O3 photodetectors. (C) 2016 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available