Journal
PROGRESS IN PHOTOVOLTAICS
Volume 30, Issue 7, Pages 740-749Publisher
WILEY
DOI: 10.1002/pip.3547
Keywords
germanium; III-V solar cells; space solar cells; thin solar cells
Funding
- Agencia Estatal de Investigacion [EQC2019-005701-P]
- Ministerio de Ciencia e Innovacion [PID2020-112763RB-I00]
- Universidad Politecnica de Madrid
- European Regional Development Fund
- Fundacion Iberdrola Espana
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This work demonstrates a new manufacturing process for fabricating thin solar cells, avoiding the brittleness or fragility issues of thin wafers without the need for carriers or temporary substrates. The technique has been successfully applied to Ge single and GaInP/Ga(In)As/Ge triple-junction solar cells with different substrate thicknesses, but a final thickness of around 20-30 μm is recommended.
In this work, we demonstrate a new manufacturing process that allows to fabricate thin solar cells avoiding problems related to the brittleness or fragility of thin wafers without needing any carrier nor temporary substrate. This technique has been successfully applied to Ge single and GaInP/Ga(In)As/Ge triple-junction solar cells grown on Ge substrates, achieving 47.5- and 55.5-mu m-thick substrates, respectively. Although this technique should allow to thin substrates to any desired thickness, a final thickness around 20-30 mu m is recommended due to practical concerns such as the uneven substrate thickness throughout the wafer. In any case, a III-V solar cell with such a thickness should be thin enough for most applications and, in particular, for space ones.
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