Journal
JOURNAL OF APPLIED PHYSICS
Volume 119, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4952708
Keywords
-
Categories
Funding
- National Science Center in Poland [NCN 515606339]
- Visegrad Group (V4)-Japan Joint Research Program on Highly Safe GaN Metal-Oxide-Semiconductor Transistor Switch
- Grants-in-Aid for Scientific Research [15K18034] Funding Source: KAKEN
Ask authors/readers for more resources
We performed, for the first time, quantitative characterization of electron capture cross sections sigma of the interface states at dielectric/III-N heterojunction interfaces. We developed a new method, which is based on the photo-assisted capacitance-voltage measurements using photon energies below the semiconductor band gap. The analysis was carried out for AlGaN/GaN metal-insulatorsemiconductor heterojunction (MISH) structures with Al2O3, SiO2, or SiN films as insulator deposited on the AlGaN layers with Al content (x) varying over a wide range of values. Additionally, we also investigated an Al2O3/InAlN/GaN MISH structure. Prior to insulator deposition, the AlGaN and InAlN surfaces were subjected to different treatments. We found that sigma for all these structures lies in the range between 5 x 10(-19) and 10(-16) cm(2). Furthermore, we revealed that sigma for dielectric/AlxGa1-xN interfaces increases with increasing x. We showed that both the multiphonon-emission and cascade processes can explain the obtained results. Published by AIP Publishing.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available