Related references
Note: Only part of the references are listed.Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing
Marko J. Tadjer et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2016)
Analysis of the Tb3+ recombination in ion implanted AlxGa1-xN (0 ≤ x ≤ 1) layers
J. Rodrigues et al.
JOURNAL OF LUMINESCENCE (2016)
Mechanisms of Implantation Damage Formation in AlxGa1-xN Compounds
D. Nd. Faye et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2016)
Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al0.15Ga0.85N
S. Magalhaes et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2016)
Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices
D. Nd. Faye et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2016)
Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures
Seung-Hyuk Lim et al.
LIGHT-SCIENCE & APPLICATIONS (2016)
Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices
T. C. Zheng et al.
SCIENTIFIC REPORTS (2016)
High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping
Yingda Chen et al.
APPLIED PHYSICS LETTERS (2015)
AlGaN devices and growth of device structures
K. A. Jones et al.
JOURNAL OF MATERIALS SCIENCE (2015)
High p-type conduction in high-Al content Mg-doped AlGaN
Toru Kinoshita et al.
APPLIED PHYSICS LETTERS (2013)
Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors
Pierre Ruterana et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Mechanisms of damage formation in Eu-implanted AlN
S. Leclerc et al.
JOURNAL OF APPLIED PHYSICS (2012)
It's not easy being green: Strategies for all-nitrides, all-colour solid state lighting
K. P. O'Donnell et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2012)
Enhancement-Mode AlGaN/GaN HEMTs Fabricated by Standard Fluorine Ion Implantation with a Si3N4 Energy-Absorbing Layer
Hongwei Chen et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2011)
Mechanisms of damage formation in Eu-implanted GaN probed by X-ray diffraction
B. Lacroix et al.
EPL (2011)
A mechanism for damage formation in GaN during rare earth ion implantation at medium range energy and room temperature
P. Ruterana et al.
JOURNAL OF APPLIED PHYSICS (2011)
In-Situ RBS Channelling Studies Of Ion Implanted Semiconductors And Insulators
E. Wendler
APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: TWENTY-FIRST INTERNATIONAL CONFERENCE (2011)
Optical doping and damage formation in AlN by Eu implantation
K. Lorenz et al.
JOURNAL OF APPLIED PHYSICS (2010)
Damage and microstructure evolution in GaN under Au ion irradiation
Yanwen Zhang et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2010)
X-ray diffraction of III-nitrides
M. A. Moram et al.
REPORTS ON PROGRESS IN PHYSICS (2009)
Compositional dependence of damage buildup in Ar-ion bombarded AlGaN
K. Pagowska et al.
VACUUM (2009)
A comparative structural investigation of GaN implanted with rare earth ions at room temperature and 500 °C
F. Gloux et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2008)
Ultraviolet light-emitting diodes based on group three nitrides
Asif Khan et al.
NATURE PHOTONICS (2008)
Transmission electron microscopy investigation of the structural damage formed in GaN by medium range energy rare earth ion implantation
F. Gloux et al.
JOURNAL OF APPLIED PHYSICS (2006)
Defect production in neutron irradiated GaN
J. G. Marques et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2006)
X-ray scattering study of hydrogen implantation in silicon
Nicolas Sousbie et al.
JOURNAL OF APPLIED PHYSICS (2006)
High temperature annealing of rare earth implanted GaN films: Structural and optical properties
K Lorenz et al.
OPTICAL MATERIALS (2006)
Defect accumulation during channeled erbium implantation into GaN
B Pipeleers et al.
JOURNAL OF APPLIED PHYSICS (2005)
Dynamic annealing in III-nitrides under ion bombardment
SO Kucheyev et al.
JOURNAL OF APPLIED PHYSICS (2004)
Structure and photoluminescence studies of Pr-implanted GaN
SF Song et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Implantation angle dependence of ion irradiation damage in GaN
J Nord et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2003)
Influence of the implantation angle on the generation of defects for Er implanted GaN
B Pipeleers et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2003)
Molecular dynamics study of defect formation in GaN cascades
J Nord et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2003)
X-ray determination of the composition of partially strained group-III nitride layers using the Extended Bond Method
N Herres et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2002)
Structural disorder in ion-implanted AlxGa1-xN
SO Kucheyev et al.
APPLIED PHYSICS LETTERS (2002)
Ion implantation into GaN
SO Kucheyev et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2001)
Suppression of rare-earth implantation-induced damage in GaN
A Vantomme et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2001)