Optical properties and band bending of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy

Photoluminescence (PL) properties of In0.2Ga0.8As/GaAs0.96Bi0.04/In0.2Ga0.8As quantum well (QW) grown on GaAs substrates by gas source molecular beam epitaxy were studied by varying excitation power and temperature, respectively. The type-II transition energy shifts from 1.149 eV to 1.192 eV when increasing the excitation power from 10 mW to 150 mW at 4.5 K, which was ascribed to the band-bending effect. On the other hand, the type-II PL quenches quickly along with fast redshift with the increasing temperature due to the relaxation of the band bending caused by the thermal excitation process. An 8 band k.p model was used to analyze the electronic properties and the band-bending effect in the type-II QW. The calculated subband levels and transition energy fit well with the experiment results, and two thermal activation energies of 8.7 meV and 50 meV, respectively, are deduced. Published by AIP Publishing.