High pressure synthesized ferroelectric MnSnO3 with high carrier mobility and the effects of ion implantation on structural and magnetic properties

Ferroelectric materials with high electron mobility are rarely investigated, due to the commonly recognized contradictory between the ferroelectric polarization and the carrier conductivity, but they provide the basis for the further application in bulk photovoltaic effect. Here, using the high pressure technology, we synthesized MnSnO3, a ferroelectric material with LiNbO3-Type structure and high electron mobility of 29 cm(2) V-1 s(-1). Phonon vibration modes are mainly ascribed to atomic vibration of MnO6 octahedral, which couples strongly with conduction electrons in polar semiconductors. After the Cu and Ag implantation in MnSnO3, the presence of O vacancies suppresses the vibration of Mn along the polarized direction and breathing vibration of the O. Meanwhile, the implanted ions may act as a medium to resist on the vibration and enhance the spin-phonon interaction, which is hardly observed in the pristine MnSnO3.(c) 2022 Elsevier B.V. All rights reserved.

Automated summary

In this study, we successfully synthesized a ferroelectric material MnSnO3 with high electron mobility using high pressure technology. The electronic properties of MnSnO3 were further improved by ion implantation of Cu and Ag.