Coherent Interactions between Silicon-Vacancy Centers in Diamond

We report tunable excitation-induced dipole-dipole interactions between silicon-vacancy color centers in diamond at cryogenic temperatures. These interactions couple centers into collective states, and excitation-induced shifts tag the excitation level of these collective states against the background of excited single centers. By characterizing the phase and amplitude of the spectrally resolved interaction-induced signal, we observe oscillations in the interaction strength and population state of the collective states as a function of excitation pulse area. Our results demonstrate that excitation-induced dipole-dipole interactions between color centers provide a route to manipulating collective intercenter states in the context of a congested, inhomogeneous ensemble.

Automated summary

We report on the tunable excitation-induced dipole-dipole interactions between silicon-vacancy color centers in diamond at cryogenic temperatures. These interactions couple the centers into collective states and allow for the tagging of the excitation level of these states. By analyzing the phase and amplitude of the spectra, we observed oscillations in the interaction strength and population state of the collective states. These findings demonstrate the potential of excitation-induced dipole-dipole interactions between color centers in manipulating collective intercenter states.