4.8 Article

Detecting Induced p ± ip Pairing at the Al-InAs Interface with a Quantum Microwave Circuit

Journal

PHYSICAL REVIEW LETTERS
Volume 128, Issue 10, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.128.107701

Keywords

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Funding

  1. Scientific Service Units of IST Austria
  2. European Union's Horizon 2020 research and innovation program under the Marie Sklodowska-Curie Grant [754411]
  3. Office of Naval Research Award [N00014-21-1-2450]

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Superconductor-semiconductor hybrid devices are essential for quantum information processing. This study investigates the breakdown of superconductivity in a two-dimensional Al-InAs hybrid system under an applied magnetic field, and accurately analyzes the contribution of different components in the system.
Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a twodimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductivity due to an applied magnetic field. We find a fingerprint from the two-component nature of the hybrid system, and quantitatively compare with a theory that includes the contribution of intraband p +/- ip pairing in the InAs, as well as the emergence of Bogoliubov-Fermi surfaces due to magnetic field. Separately resolving the Al and InAs contributions allows us to determine the carrier density and mobility in the InAs.

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