Phonon-Limited Mobility in h-BN Encapsulated AB-Stacked Bilayer Graphene

The weak acoustic phonon scattering in graphene monolayer leads to high mobilities even at room temperatures. We identify the dominant role of the shear phonon mode scattering on the carrier mobility in AB-stacked graphene bilayer, which is absent in monolayer graphene. Using a microscopic tight-binding model, we reproduce experimental temperature dependence of mobilities in high-quality boron nitride encapsulated bilayer samples at temperatures up to similar to 200 K. At elevated temperatures, the surface polar phonon scattering from boron nitride substrate contributes significantly to the measured mobilities of 15 000 to 20000 cm(2)/Vs at room temperature and carrier concentration n similar to 10(12) cm(-2). A screened surface polar phonon potential for a dual-encapsulated bilayer and transferable tight-binding model allows us to predict mobility scaling with temperature and band gap for both electrons and holes in agreement with the experiment.

Automated summary

The weak acoustic phonon scattering in graphene monolayer leads to high mobilities even at room temperatures. We identify the dominant role of shear phonon mode scattering on the carrier mobility in AB-stacked graphene bilayer, which is absent in monolayer graphene. The surface polar phonon scattering from a boron nitride substrate contributes significantly to the measured mobilities at elevated temperatures.