Journal
PHYSICA SCRIPTA
Volume 97, Issue 7, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1402-4896/ac735f
Keywords
heterojunction; deep-ultraviolet detection; Ga2O3
Categories
Funding
- National Natural Science Foundation of China [61774019]
- Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications [XK1060921115, XK1060921002]
- Scientific and Technologial Innovation Programs of Higher Education Institutions in Shanxi [2021L588]
- Fundamental Research Program of Shanxi Province [202103021223388]
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A self-powered deep ultraviolet photodetector based on P3HT/β-Ga2O3 heterojunction with outstanding photoelectric performance and stability was presented, providing a simple and effective strategy for designing self-powered ultraviolet photodetectors.
A self-powered deep ultraviolet photodetector based on a hybrid Poly(3-hexylthiophene) (P3HT)/beta-gallium oxide-(beta-Ga2O3) heterojunction with planar structure is presented in this study. The P3HT precursor solution was spin-coating onto the Ga2O3 film grown by metal-organic chemical vapor deposition (MOCVD). The prepared device demonstrates outstanding photoelectric performance with an ultra-low dark current of 0.18 pA, a high responsivity of 57.2 mA W-1, and a detectivity of 1.47 x 10(17) Jones under 1 mu W cm(-2) at 0 V. Benefiting from the formation of the built-in electric field, the photocurrent and response speed have been improved. Furthermore, the physical mechanism of the device under self-powered mode was discussed through an energy band diagram. The device has good stability and repeatability under different light intensities and different voltages. This work provides a simple and effective strategy for designing self-powered ultraviolet photodetectors.
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