Room-temperature growth optimization and PL characteristic of polytype h/α-MoO3 thin films by chemical precipitation method

In this study, MoO3 thin films were coated using a simple chemical precipitation technique at room temperature, without using an autoclave or other complex equipment. Films were deposited on precoated MoO3 seed layers prepared by spray pyrolysis on glass substrates. The effects of the seed layer growth conditions and pH value of the precipitation method's solution on the characteristics of MoO3 films were investigated. The Raman and X-ray diffraction techniques showed that MoO3 films have grown in mixed hexagonal (h) and orthorhombic (alpha) crystal structures and the scanning electron microscope verified that the samples' surface was covered of both hexagonal micro rods and lamellar micro belts. The XRD patterns indicated that the crystallinity was significantly improved using a seed layer sprayed under lower carrier gas pressure, and lower pH value of the precipitation method's solution. The UV-Visible spectra showed that using seed layers prepared at higher carrier gas pressure decreases the bandgap of the films prepared by precipitation, due to the incorporation of more oxygen vacancies. The photoluminescence studies showed that the film deposited at a higher solution's pH value has higher PL intensity, which indicates that this sample is a suitable candidate for optoelectronic applications.

Automated summary

This study successfully coated MoO3 thin films using a simple chemical precipitation technique at room temperature. The seed layer growth conditions and pH value of the precipitation solution were found to affect the structure and characteristics of the films, including crystallinity and bandgap. The film deposited at a higher solution's pH value showed higher photoluminescence intensity, indicating its suitability for optoelectronic applications.