Journal
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume 137, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.physe.2021.115016
Keywords
Black arsenic phosphorus; 2D electronic devices; Half-metallic; Spin filtering effect; Spintronics
Funding
- National Natural Science Foundation of China [11704291, 51875417]
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences [21YZ03]
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The electron and magnetic properties of non-metallic light atoms adsorbed AsP were studied, revealing promising spin properties and almost perfect spin filtering effects, suggesting potential applications in spintronics.
Black arsenic phosphorus (b-AsP) monolayer is a new two-dimensional (2D) nano material with medium band gap and ultra-high carrier mobility, which will have broad application prospects in 2D electronic devices. Here the electron and magnetic of non-metallic light atoms adsorbed AsP are studied by density functional theory (DFT). The hollow sites of B and N adsorbed AsP are half-metallic make them a promising spin material. According to the calculation of the hollow site devices of AsP adsorbed by B and N exhibit almost perfect spin filtering effect. In addition, the I-V curve of the device for B-adsorbed AsP shows a significant negative differential resistance effect. The magnetoresistance of N-adsorbed AsP device is as high as 10(3)%. These results indicate that B-adsorbed and N-adsorbed AsP systems have potential applications in spintronics.
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