Phonon assisted carrier relaxation dynamics of Dirac fermions in monolayer and bilayer graphene

The relaxation phenomenon of carriers through the scattering of electrons by the long-wavelength phonons in suspended monolayer and bilayer graphene is systematically reported to understand the effect of electron- phonon interaction on the anomalous Rabi oscillations (occur far from resonance). Rabi oscillations (conventional) near the resonance show a relaxation phenomenon of carriers in these systems in the presence of different phonon modes. Our findings show that the electron-phonon interaction in monolayer and bilayer graphene is not prominent to produce the relaxation of charge carriers, and hence, in dephasing the anomalous Rabi oscillations near the Dirac point. In other words, there are significant number of oscillations (Rabi cycles) present near the Dirac point far away from the conventional resonance (off resonance). However, the relaxation of carriers in these systems is found to be important only far away from the Dirac point in the off resonant case under the influence of electron-phonon interaction. This means that the phenomenon of anomalous Rabi oscillations in these systems is robust with respect to the electron-phonon interaction near the Dirac point, which is in contrast to the conventional Rabi oscillations.

Automated summary

The relaxation phenomenon of carriers through the scattering of electrons by long-wavelength phonons in suspended monolayer and bilayer graphene is reported to understand the effect of electron-phonon interaction on the anomalous Rabi oscillations. The electron-phonon interaction in monolayer and bilayer graphene does not significantly induce the relaxation of charge carriers, indicating the robustness of anomalous Rabi oscillations near the Dirac point.