4.5 Article

Exploring different routes for the synthesis of 2D MoS2/1D PANI nanocomposites and investigating their electrical properties

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DOI: 10.1016/j.physe.2021.115128

Keywords

MoS2; Polyaniline; Nanocomposite; In-situ polymerization; Hydrothermal

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This work reports three different routes for synthesizing MoS2/PANI nanocomposites and characterizes the synthesized samples using various techniques. The results show that the synthesized nanocomposites retain the morphology of MoS2 and PANI, and exhibit electronic interactions. These nanocomposites have high conductivity and carrier mobility, making them suitable for electronic applications.
In this work, we report three different routes for the synthesis of molybdenum disulfide (MoS2)/polyaniline (PANI) nanocomposites. MoS2 powder was synthesized using hydrothermal technique and PANI was prepared by in-situ chemical oxidative polymerization of aniline, separately. Hydrothermal and in-situ polymerization pro -cesses were also used for the synthesis of composites. The synthesized samples were characterized using FESEM, XRD, Raman, FTIR, UV-Vis. spectroscopy, and Hall effect. FESEM images revealed that the hydrothermally synthesized MoS2 powder has composed of flower-like microspheres constructed with 2D nanosheets and PANI has 1D nanofiber morphology, and in all three synthesized composites, MoS2 and PANI keep their morphology. All characterizations confirmed the formation of a combination of MoS2 & nbsp;nanosheets and PANI nanofibers. FTIR, Raman, and XRD analysis showed that characteristic peaks of 1T/2H-MoS2 & nbsp;and PANI are present in nano-composite samples. The bandgap reduction of the synthesized nanocomposites as low as 1.32 eV compared to PANI bandgap (1.57 eV) suggests electronic interactions between MoS2 & nbsp;nanosheets and PANI nanofibers. The electrical conduction mechanism of prepared nanocomposites was investigated using the Hall effect and dis-cussed. The highest conductivity and carrier mobility values for nanocomposites were recorded to be about 4.69 (omega-cm)(-1) and (0.449 cm(2)V(-1)s(-1)), respectively, which makes them suitable for electronic applications.

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