Comparison of capacitance-frequency and current-voltage characteristics of Al/CdS-PVP/p-Si and Al/p-Si structures

In this paper, we report a simple ultrasound-assisted method for the preparation of CdS nanostructures to utilize as an interfacial layer for fabrication of Al/CdS-PVP/p-Si structure. The comparison of C-f and I-V characterizations on both Al/p-Si (MS) and Al/CdS-PVP/p-Si (MPS) Schottky structures have been analyzed and reported. For the fabrication of CdS semiconductor nanostructures, the sonochemistry method was used. The optical, compositional, and structure of the prepared CdS nanostructures have been investigated by UV-Vis spectroscopy, X-ray diffraction (XRD), FE-SEM, and EDX techniques. The main electrical and dielectric parameters of the fabricated MS and MPS structures have been characterized. The analyses depict the presence of CdS-PVP nanocomposite improves the efficiency of the MPS diode by reducing the ideality factor and increasing the barrier height and shunt resistance. The result of dielectric studies showed dielectric parameters are strongly frequency-dependent.

Automated summary

In this study, a simple ultrasound-assisted method was used to prepare CdS nanostructures for the fabrication of Al/CdS-PVP/p-Si structure. The analysis of C-f and I-V characterizations showed that CdS-PVP nanocomposite can improve the efficiency of MPS diode.